features ? high gain: 20 db at 900 to 1500 mhz typical ? high output power: p sat = +12.5 dbm at 900 mhz +11 dbm at 1500 mhz ? low bias voltage: 3.0 v typical, 2.7 v minimum ? super small package ? tape and reel packaging option available UPC2771T 3v, 2400 mhz medium power si mmic amplifier description the UPC2771T is a silicon monolithic integrated circuit which is manufactured using the nesat iii process. the nesat iii process produces transistors with f t approaching 20 ghz. this amplifier was designed as a driver amplifier for digital cellular applications. operating on a 3 volt supply, this ic is ideally suited for hand-held, portable designs. nec's stringent quality assurance and test procedures en- sure the highest reliability and performance. electrical characteristics (t a = 25 c, z l = z s = 50 w , v cc = 3.0 v) 0.1 0.3 1.0 3.0 24 22 20 18 16 14 t a = -40? c t a = +25? c t a = +85? c v cc = 3.0 v +85? c +25? c -40? c gain vs. frequency and temperature frequency, f (ghz) gain, g s (db) part number UPC2771T package outline t06 symbols parameters and conditions units min typ max i cc circuit current (no signal) ma 36 45 g s small signal gain, f = 900 mhz db 19 21 24 f = 1500 mhz db 17 20 23 f u upper limit operating frequency (the gain at f u is 3 db down from the gain at 100 mhz) ghz 1.7 2.1 p 1db 1 db compressed output power, f = 900 mhz dbm +9 +11.5 f = 1500 mhz dbm +7 +9.5 p sat saturated output power, f = 900 mhz dbm +12.5 f = 1500 mhz dbm +11 nf noise figure, f = 900 mhz db 6 7.5 f = 1500 mhz db 6 7.5 rl in input return loss, f = 900 mhz db 10 14 f = 1500 mhz db 10 14 rl out output return loss, f = 900 mhz db 6.5 9.5 f = 1500 mhz db 5.5 8.5 isol isolation, f = 900 mhz db 25 30 f = 1500 mhz db 25 30 oip3 ssb outputthird order intercept point f = 900, 902 mhz dbm +16 f = 1500, 1502 mhz dbm +13 california eastern laboratories
0 1 2 3 4 50 40 30 20 10 0 circuit current vs. voltage 0.1 0.3 1.0 3.0 24 22 20 18 16 14 12 10 8 6 v cc = 2.7 v v cc = 3.0 v v cc = 3.3 v nf g s v cc = 2.7v v cc = 3.0v v cc = 3.3v v cc = 3.3v v cc = 3.0 v v cc = 2.7 v 7 5 3 supply voltage, v cc (v) circuit current, i cc (ma) circuit current vs. temperature -60 -40 -20 0 20 40 60 80 100 50 40 30 20 10 0 circuit current, i cc (ma) temperature ( c) frequency, f (ghz) frequency, f (ghz) gain, g s (db) return loss (db) noise figure, nf (db) gain and noise figure vs. frequency and voltage
0.1 0.3 1.0 3.0 0 -10 -20 -30 -40 v cc = 3.0v rl out rl in input return loss and output return loss vs. frequency typical performance curves (t a = 25 c) UPC2771T absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cc supply voltage v 3.6 i cc total supply current ma 77.7 p in input power dbm +13 p t total power dissipation 2 mw 280 t op operating temperature c -40 to +85 t stg storage temperature c -55 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 50 x 50 x 1.6 mm epoxy glass pwb (t a = 85 c). recommended operating conditions symbols parameters units min typ max v cc supply voltage v 2.7 3 3.3 t op operating temperature c -40 +25 +85 test circuit 1000 pf v cc 50 w out in l* 2, 3, 5 1 6 4 50 w 1000 pf 1000 pf * this device is tested using a bias tee with typical series inductance, l = 1000 nh. in circuit applications, l = 50 nh is satisfactory at 900 mhz, and l = 10 nh is satisfactory at 1500 mhz.
UPC2771T typical performance curves (t a = 25 ) 0.9 ghz 1.5 ghz 1.9 ghz 0.1 1.9 ghz 1.5 ghz 0.9 ghz 0.1 ghz s 22 vs. frequency (v cc = 3.0 v) s 11 vs. frequency (v cc = 3.0 v) 0.1 0.3 1.0 3.0 17 15 13 11 9 7 5 v cc = 3.0 v p in = -3 dbm v cc = 3.3 v v cc = 2.7 v saturated output power vs. frequency and temperature saturated output power, p o(sat), (dbm) frequency, f (ghz) frequency, f (ghz) saturated output power, p o(sat), (dbm) saturated output power vs. frequency and voltage 0.1 0.3 1.0 3.0 0 -10 -20 -30 -40 -50 v cc = 3.0v frequency, f (ghz) isolation, isol (db) isolation vs. frequency output power, p out (dbm) -25 -20 -15 -10 -5 0 15 10 5 0 -5 f = 900 mhz v cc = 3.0 v v cc = 3.3 v v cc = 2.7 v output power vs. input power and voltage input power, p in (dbm) 0.1 0.3 1.0 3.0 17 15 11 9 7 5 13 pi n = -3 dbm t a = +25?c t a = +85?c t a = -40?c
UPC2771T outline dimensions (units in mm)
+0.2
-0.3 2.8 1.5 +0.2
-0.1 1 2 3 4 5 6 1.90.2 -0.05
+0.10 0.3 0.130.1 1.1 +0.2
-0.1 0 to 0.1 0.95 0.95 0.8 2.90.2 recommended p.c.b. layout (units in mm) 3.10 4 5 3 2 1 6 1.0
min 0.5 min 0.95 1.0
min note: all dimensions are typical unless otherwise specified. UPC2771T package outline t06 lead connections in v cc out equivalent circuit 2 1 4 5 6 2 1 4 5 6 33 c2h 1. input 2. gnd 3. gnd 4. output 5. gnd 6. v cc (top view) (bottom view) part number qty UPC2771T-e3 3k/reel ordering information note: embossed tape, 8 mm wide. exclusive agent for nec corporation rf & microwave semiconductor products - u.s. & canada california eastern laboratories, inc headquarters 4590 patrick henry drive santa clara, ca 95054-1817 (408) 988-3500 telex 34-6393/fax (408) 988-0279 data subject to change without notice printed in usa on recycled paper 11/95
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